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1

Spatial localization of the buried ion-beam synthesized layer of silicon dioxide inclusions in silicon

A.B. Danilin, A.A. Malinin, V.N. Mordkovich, V.V. Saraikin, O.I. Vyletalina

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1993

Language:

english

File:

PDF, 1003 KB

english, 1993

2

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Krasnobaev, L. Y., Cuomo, J. J., Vyletalina, O. I.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 380 KB

english, 1997

3

Sequential ion beam synthesis of buried Si3N4 layers in silicon

A.B. Danilin, K.A. Drakin, A.A. Malinin, V.N. Mordkovich, A.F. Petrov, V.V. Saraikin, O.I. Vyletalina

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1993

Language:

english

File:

PDF, 536 KB

english, 1993

4

Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO2 Precipitates

Danilin, A.B., Drakin, K.A., Malinin, A.A., Mordkovich, V.N., Petrov, A.F., Vyletalina, O.I.

Journal:

Solid State Phenomena

Year:

1991

File:

PDF, 364 KB

1991

5

Ion beam synthesis of Si3N4 amorphous buried layers

A.I. Belogorokhov, A.B. Danilin, V.N. Mordkovich, O.I. Vyletalina

Journal:

Materials Science and Engineering: B

Year:

1992

Language:

english

File:

PDF, 117 KB

english, 1992

6

Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses

L.A. Charni, A.B. Danilin, K.A. Drakin, A.A. Malinin, Yu.N. Parkhomenko, A.F. Petrov, O.I. Vyletalina

Journal:

Materials Science and Engineering: B

Year:

1992

Language:

english

File:

PDF, 484 KB

english, 1992

7

Boron Gettering by Fluorine in Ion Implanted Silicon

Krasnobaev, L.Ya., Cuomo, J. J., Vyletalina, O. I.

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 299 KB

english, 1997

8

Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon

A.B. Danilin, K.A. Drakin, V.V. Kukin, A.A. Malinin, V.N. Mordkovich, A.F. Petrov, V.V. Saraykin, O.I. Vyletalina

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 282 KB

english, 1991

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